Performance characterization of schottky tunneling graphene field effect transistor at 60 nm gate length

A planar Graphene Field-Effect Transistor GFET performance with 60 nm gate length was evaluated in discovering new material to meet the relentless demand for higher performance-power saving features. The ATHENA and ATLAS modules of SILVACO TCAD simulation tool was employed to virtually design and as...

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Bibliographic Details
Main Authors: Abidin, N.F.Z., Ahmad, I., Ker, P.J., Menon, P.S.
Format: Article
Language:en_US
Published: 2017
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