Parameter variations of 20NM GAAS junctionless-gate-all-around field-effect transistor with quantum mechanical effects

The scaling down of nanoelectronic device dimension beyond the Moore’s Law era has introduced the use of new material and device architecture of Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET). The use of nanomaterial and advanced device architecture allows the mitigation of the short cha...

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Bibliographic Details
Main Author: Mohamad Rasol, Muhammad Faidzal
Format: Thesis
Language:English
Published: 2021
Subjects:
Online Access:http://eprints.utm.my/id/eprint/102679/1/MuhammadFaidzalMohamadRasolMSKE2021.pdf.pdf
http://eprints.utm.my/id/eprint/102679/
http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:149310
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