Modelling and simulation of saturation region in double gate graphene nanoribbon transistors
Novel analytical models for surface field distribution and saturation region length for double gate graphene nanoribbon transistors are proposed. The solutions for surface potential and electric field are derived based on Poisson equation. Using the proposed models, the effects of several parameters...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
Pleiades Publishing, Ltd.
2012
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/47235/ http://dx.doi.org/10.1134/S1063782612010101 |
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