Analytical model for threshold voltage of double gate bilayer graphene field effect transistors

• Main Authors: Saeidmanesh, Mehdi, Rahmani, Meisam, Karimi, Hediyeh, Khaledian, Mohsen, Ismail, Razali
• Format: Article
• Published: Elsevier Ltd. 2014
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/51851/; http://dx.doi.org/10.1016/j.microrel.2013.08.003

A new model for threshold voltage of double-gate Bilayer Graphene Field Effect Transistors (BLG-FETs) is presented in this paper. The modeling starts with deriving surface potential and the threshold voltage was modeled by calculating the minimum surface potential along the channel. The effect of qu...