Design and optimization of 22 nm gate length high-k/metal gate NMOS transistor

• المؤلفون الرئيسيون: Afifah Maheran, A.H., Menon, P.S., Ahmad, I., Shaari, S., Elgomati, H.A., Salehuddin, F.
• منشور في: 2017
• الوصول للمادة أونلاين: http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5217

In this paper, we invented the optimization experiment design of a 22 nm gate length NMOS device which uses a combination of high-k material and metal as the gate which was numerically developed using an industrial-based simulator. The high-k material is Titanium dioxide (TiO2), while the metal gate...