Performance Analysis Of Ultrathin Junctionless Double Gate Vertical MOSFETs
The main challenge in MOSFET minituarization is to form an ultra-shallow source/drain (S/D) junction with high doping concentration gradient, which requires an intricate S/D and channel engineering. Junctionless MOSFET configuration is an alternative solution for this issue as the junction and dopin...
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Main Authors: | Salehuddin, Fauziyah, Kaharudin, Khairil Ezwan, Roslan, Ameer Farhan, Mohammed Napiah, Zul Atfyi Fauzan, Mohd Zain, Anis Suhaila |
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Format: | Article |
Language: | English |
Published: |
Institute of Advanced Engineering and Science
2019
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Online Access: | http://eprints.utem.edu.my/id/eprint/24278/2/KEKAHARUDIN-BEEI-DEC2019.PDF http://eprints.utem.edu.my/id/eprint/24278/ https://beei.org/index.php/EEI/article/view/1615/1202 |
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