Design Consideration And Impact Of Gate Length Variation On Junctionless Strained Double Gate MOSFET

Aggressive scaling of Metal-oxide-semiconductor Field Effect Transistors (MOSFET) have been conducted over the past several decades and now is becoming more intricate due to its scaling limit and short channel effects (SCE). To overcome this adversity, a lot of new transistor structures have been pr...

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Bibliographic Details
Main Authors: Kaharudin, Khairil Ezwan, Salehuddin, Fauziyah, Roslan, Ameer Farhan, Mohammed Napiah, Zul Atfyi Fauzan, Mohd Zain, Anis Suhaila
Format: Article
Language:English
Published: Blue Eyes Intelligence Engineering and Sciences Publication 2019
Online Access:http://eprints.utem.edu.my/id/eprint/24545/2/IJRTE_K.E.KAHARUDIN.PDF
http://eprints.utem.edu.my/id/eprint/24545/
https://www.ijrte.org/wp-content/uploads/papers/v8i2S6/B11460782S619.pdf
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