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Performance Analysis Of Ultrathin Junctionless Double Gate Vertical MOSFETs

The main challenge in MOSFET minituarization is to form an ultra-shallow source/drain (S/D) junction with high doping concentration gradient, which requires an intricate S/D and channel engineering. Junctionless MOSFET configuration is an alternative solution for this issue as the junction and dopin...

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Bibliographic Details
Main Authors: Salehuddin, Fauziyah, Kaharudin, Khairil Ezwan, Roslan, Ameer Farhan, Mohammed Napiah, Zul Atfyi Fauzan, Mohd Zain, Anis Suhaila
Format: Article
Language:English
Published: Institute of Advanced Engineering and Science 2019
Online Access:http://eprints.utem.edu.my/id/eprint/24278/2/KEKAHARUDIN-BEEI-DEC2019.PDF
http://eprints.utem.edu.my/id/eprint/24278/
https://beei.org/index.php/EEI/article/view/1615/1202
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http://eprints.utem.edu.my/id/eprint/24278/2/KEKAHARUDIN-BEEI-DEC2019.PDF
http://eprints.utem.edu.my/id/eprint/24278/
https://beei.org/index.php/EEI/article/view/1615/1202

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