Comparative High-K Material Gate Spacer Impact In DG-FinFET Parameter Variations Between Two Structures

• Main Authors: Roslan, Ameer Farhan, Salehuddin, Fauziyah, Mohd Zain, Anis Suhaila, Kaharudin, Khairil Ezwan, Haroon, Hazura, Abdul Razak, Hanim, Idris, Siti Khadijah, Ahmad, Ibrahim
• Format: Article
• Language: English
• Published: Institute of Advanced Engineering and Science 2019
• Online Access: http://eprints.utem.edu.my/id/eprint/24221/2/AFROSLAN-IJEECS_MAY2019.PDF; http://eprints.utem.edu.my/id/eprint/24221/; http://ijeecs.iaescore.com/index.php/IJEECS/article/view/16750/11918#

This paper investigates the impact of the high-K material gate spacer on short channel effects (SCEs) for the 16 nm double-gate FinFET (DG-FinFET), where depletion-layer widths of the source-drain corresponds to the channel length. Virtual fabrication process along with design modification throughou...