Enhanced Performance Of 19 Single Gate MOSFET With High Permittivity Dielectric Material

In this research, the performance of the 19 nm single gate MOSFET is enhanced through the implementation of the high permittivity dielectric material. The MOSFET scaling trends necessities in device dimensions can be satisfied through the implementation of the high-K dielectric materials in place of...

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Bibliographic Details
Main Authors: Roslan, Ameer Farhan, Salehuddin, Fauziyah, Mohd Zain, Anis Suhaila, Kaharudin, Khairil Ezwan, Ahmad, Ibrahim
Format: Article
Language:English
Published: Elsevier B.V. 2020
Online Access:http://eprints.utem.edu.my/id/eprint/25210/2/21307-40764-1-PB.pdf
http://eprints.utem.edu.my/id/eprint/25210/
http://ijeecs.iaescore.com/index.php/IJEECS/article/view/21307/13672
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