Fabrication of p-type Double gate and Single gate Junctionless silicon nanowire transistor by Atomic force microscopy nanolithography

• Main Authors: Dehzangi, Arash, Larki, Farhad, Hassan, Jumiah, Hutagalung, Sabar D., Saion, Elias, Hamidon, Mohd Nizar, Abdullah, A. Makarimi, Kharazmi, Alireza, Mohammadi, Sanaz, Majlis, Burhanoddin Y.
• Format: Book Section
• Published: Trans Tech Publications 2013
• Online Access: http://psasir.upm.edu.my/id/eprint/30416/

In this work, we have investigated the fabrication of Double gate and Single gate Junctionless silicon nanowire transistor using silicon nanowire patterned on lightly doped (105 cm-3) p-type Silicon on insulator wafer fabricated by Atomic force microscopy nanolithography technique. Local anodic oxid...