Work Function Variations On Electrostatic And RF Performances Of JLSDGM Device
This paper offers a systematic analysis on the impact of work function (WF) variations on electrostatic and radio frequency (RF) performances of n-channel junctionless strained double gate (DG) (n-JLSDGM) metal oxide semiconductor field effect transistor (MOSFET). The study has been performed under...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute of Advanced Engineering and Science
2021
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| Online Access: | http://eprints.utem.edu.my/id/eprint/25631/2/PENYELIDIKAN-JOURNAL.PDF http://eprints.utem.edu.my/id/eprint/25631/ http://ijeecs.iaescore.com/index.php/IJEECS/article/view/25482/15164# |
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