Electrical characterization of N-MOS and P-MOS Junctionless Gate-All-Around (GAA) MOSFET for an inverter application

• Main Authors: Ho, Kok Pow, N., Mathan, Mohamed Ali, Mohamed Sultan, Mohd. Napi, Muhammad Luqman, Hosseingholipouras, Ali, Abd. Hamid, Fatimah Khairiah
• Format: Article
• Language: English
• Published: Penerbit UTM Press 2021
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/97825/1/FatimahKhairiah2021_ElectricalCharacterizationofNMOSandPMOS.pdf; http://eprints.utm.my/id/eprint/97825/; https://elektrika.utm.my/index.php/ELEKTRIKA_Journal/article/view/276

This paper presents a numerical simulation to examine the electrical performance of a Junctionless Gate-All-Around (JGAA) Field Effect Transistor (FET) as an inverter. The advantages of the device offer smaller threshold voltage, lower leakage current, better electrostatic control, better device per...