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Optimization of 14nm horizontal double gate for optimum threshold voltage Using L9 Taguchi method

Silvaco ATHENA TCAD tools are used to model and simulate the electrical properties and characterization of the suggested layout of a 14 nm gate length (Lg) Double Gate Bilayer Graphene Field Effect Transistor (FET). Hafnium Dioxide (HfO2) serves as the high-k material in the negative channel metal o...

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Bibliographic Details
Main Authors: Abdul Hamid, Afifah Maheran, N.H.N.M. Nizam, Salehuddin, Fauziyah, Kaharudin, Khairil Ezwan, Zainul Abidin, Noor Faizah
Format: Article
Language:English
Published: UniMAP Press 2022
Online Access:http://eprints.utem.edu.my/id/eprint/26767/2/SPECIAL%20ISSUE%20IJNEAM_VOL_15_SI_DECEMBER_2022_255-265.PDF
http://eprints.utem.edu.my/id/eprint/26767/
https://ijneam.unimap.edu.my/images/PDF/SPECIAL%20ISSUE%20BOND%202022/Vol_15_SI_December_2022_255-265.pdf
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http://eprints.utem.edu.my/id/eprint/26767/2/SPECIAL%20ISSUE%20IJNEAM_VOL_15_SI_DECEMBER_2022_255-265.PDF
http://eprints.utem.edu.my/id/eprint/26767/
https://ijneam.unimap.edu.my/images/PDF/SPECIAL%20ISSUE%20BOND%202022/Vol_15_SI_December_2022_255-265.pdf

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