Impact of high-k insulators on electrical properties of junctionless double gate strained transistor
High-k dielectric insulators are required to reduce leakage and increase transistor performance. They are able to impact the mobility of carriers in transistors positively, leading to better device performance in advanced transistor architecture. Nevertheless, an in-depth analysis of how high-k diel...
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Main Authors: | Kaharudin K.E., Salehuddin F., Zain A.S.M., Jalaludin N.A., Arith F., Junos S.A.M., Ahmad I. |
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Other Authors: | 56472706900 |
Format: | Article |
Published: |
Institute of Advanced Engineering and Science
2025
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