Impact of device parameter variation on the electrical characteristic of n-type junctionless nanowire transistor with high-k dielectrics

• Main Authors: Sule, Mohammed Adamu, Ramakrishnan, Mathangi, Alias, Nurul Ezaila, Paraman, Norlina, Johari, Zaharah, Hamzah, Afiq, Tan, Michael Loong Peng, Sheikh, Usman Ulllah
• Format: Article
• Language: English
• Published: Institute of Advanced Engineering and Science (IAES) 2020
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/28796/1/MathangiRamakrishnan2020_ImpactofDeviceParameterVariation.pdf; http://eprints.utm.my/id/eprint/28796/; http://dx.doi.org/10.11591/ijeei.v8i2.1277

Metallurgical junction and thermal budget are serious constraints in scaling and performance of conventional metal-oxide-semiconductor field-effect transistor (MOSFET). To overcome this problem, junctionless nanowire fieldeffect transistor (JLNWFET) was introduced. In this paper, we investigate the...