The effect of channel variation for long channel GaAs junctionless gate-all-around transistor

• Main Authors: Rasol, M. Faidzal, T., Ainun, H., Fatimah, J., Zaharah, S. Z. A., Mastura, A., Rashidah, A. Riyad, Munawar
• Format: Article
• Language: English
• Published: Sumy State University 2022
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/99462/1/ZaharahJohari2022_TheEffectofChannelVariationforLongChannel.pdf; http://eprints.utm.my/id/eprint/99462/; http://dx.doi.org/10.21272/jnep.14(2).02010

Since the Moore era, the use of advanced nanomaterial device architecture has been introduced to improve its electrical performance. This paper reports on the study of performance of a long channel gallium arsenide (GaAs) nanowire Junctionless Gate-All-Around (JGAA) transistor, including the quantum...