Electrical characterization of n-type cylindrical gate all around nanowire junctionless transistor with sio2 and high-k dielectrics

• Main Authors: Alias, N. E., Sule, M. A., Tan, M. L. P., Hamzah, A., Saidu, K. A., Mohammed, S., Aminu, T. K., Shehu, A.
• Format: Conference or Workshop Item
• Language: English
• Published: 2020
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/93901/1/NurulEzailaAlias2020_ElectricalCharacterizationofNTypeCylindricalGate.pdf; http://eprints.utm.my/id/eprint/93901/; https://doi.org/10.1109/ICSE49846.2020.9166886

In this work, the electrical characteristics of n-type cylindrical gate all around (GAA) nanowire junctionless transistors (NWJLT) of different gate oxides are investigated and analyzed. Silicon dioxide (SiO2) and two high-k dielectrics which are silicon nitride (Si3N4) and hafnium dioxide (HfO2) we...