A temperature characterization of (Si-FinFET) based on channel oxide thickness

This paper presents the temperature-gate oxide thickness characteristics of a fin field-effect transistor (FinFET) and discusses the possibility of using such a transistor as a temperature nano-sensor. The investigation of channel oxide thickness–based temperature characteristics is useful to optimi...

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Bibliographic Details
Main Authors: Atalla, Yousif, Hashim, Yasir, Abdul Nasir, Abd Ghafar, Jabbar, Waheb A.
Format: Article
Language:English
Published: Universitas Ahmad Dahlan 2019
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Online Access:http://umpir.ump.edu.my/id/eprint/25657/1/A%20temperature%20characterization.pdf
http://umpir.ump.edu.my/id/eprint/25657/
http://journal.uad.ac.id/index.php/TELKOMNIKA/article/view/11798
http://dx.doi.org/10.12928/telkomnika.v17i5.11798
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