Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions

• Main Authors: Mahmood, Ahmed, Jabbar, Waheb A., Hashim, Yasir, Hadi, Manap
• Format: Article
• Language: English
• Published: Sumy State University (Sumy, Ukraine) 2019
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://umpir.ump.edu.my/id/eprint/24395/1/Electrical%20%D0%A1haracterization%20ofGe-FinFET%20Transistor.pdf; http://umpir.ump.edu.my/id/eprint/24395/; https://doi.org/10.21272/jnep.11(1).01011; https://doi.org/10.21272/jnep.11(1).01011

Nano-electronic applications have benefited enormously from the great advancement in the emerging Nano-technology industry. The tremendous downscaling of the transistors’ dimensions has enabled the placement of over 100 million transistors on a single chip thus reduced cost, increased functionality...