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Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor

In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barr...

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Bibliographic Details
Main Authors: Mahmood, Ahmed, Jabbar, Waheb A., Hashim, Yasir, Hadi, Manap
Format: Article
Language:English
Published: Institute of Advanced Engineering and Science (IAES) 2019
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://umpir.ump.edu.my/id/eprint/25655/1/Effects%20of%20downscaling%20channel%20dimensions%20on%20electrical.pdf
http://umpir.ump.edu.my/id/eprint/25655/
http://ijece.iaescore.com/index.php/IJECE/article/view/15510
http://doi.org/10.11591/ijece.v9i4.pp%25p
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http://umpir.ump.edu.my/id/eprint/25655/1/Effects%20of%20downscaling%20channel%20dimensions%20on%20electrical.pdf
http://umpir.ump.edu.my/id/eprint/25655/
http://ijece.iaescore.com/index.php/IJECE/article/view/15510
http://doi.org/10.11591/ijece.v9i4.pp%25p

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