Temperature sensitivity based on channel length of FinFET transistor

• Main Authors: Atalla, Yousif, Hashim, Yasir, Abdul Nasir, Abd Ghafar
• Format: Article
• Language: English
• Published: JACS 2018
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://umpir.ump.edu.my/id/eprint/21391/1/Temperature%20Sensitivity%20based%20on%20Channel%20Length%20of%20FinFET%20Transistor.pdf; http://umpir.ump.edu.my/id/eprint/21391/; http://jacsdirectory.com/journal-of-nanoscience-and-technology/admin/issues/20180402054716_4-1-11%20JNST18105%20Published.pdf

This paper presents the temperature sensitivity of the gate length-based fin field effect transistor (FinFET) and the possibility of using such a transistor as a nano-temperature sensor. The multi-gate field effect transistor (MuGFET) simulation tool is used to investigate the temperature characteri...