Temperature characteristics of FinFET based on channel fin width and working voltage

• Main Authors: Atalla, Yousif, Hashim, Yasir, Abdul Nasir, Abd Ghafar, Jabbar, Waheb A.
• Format: Article
• Language: English
• Published: Institute of Advanced Engineering and Science (IAES) 2020
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://umpir.ump.edu.my/id/eprint/29266/1/Temperature%20characteristics%20of%20FinFET%20based%20on%20channel%20fin.pdf; http://umpir.ump.edu.my/id/eprint/29266/; http://doi.org/10.11591/ijece.v10i6.pp5650-5657; http://doi.org/10.11591/ijece.v10i6.pp5650-5657

This paper shows the temperature sensitivity of FinFET and the possibility of using FinFET as a temperature Nano sensor based on Fin width of transistor. The multi-gate field effect transistor (MuGFET) simulation tool is used to examine the temperature effect on FinFET characteristics. Current-volta...