Reliability analysis of junctionless fin field effect transistor (JL-FinFET)

• Main Author: Hamzah, Muhammad Naziiruddin
• Format: Thesis
• Language: English
• Published: 2022
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/99542/1/MuhammadNaziiruddinHamzahMSKE2022.pdf; http://eprints.utm.my/id/eprint/99542/; http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:149953

When scaling down of transistors reaches below 20nm, the reliability of a device becomes more important due to the device’s needs to sustain its performance while also being able to endure reliability degradation effects. Junctionless Fin Field Effect Transistor (JL-FinFET) provides a solution for c...