A temperature characterization of (Si-FinFET) based on channel oxide thickness

• Main Authors: Atalla, Yousif, Hashim, Yasir, Abdul Nasir, Abd Ghafar, Jabbar, Waheb A.
• Format: Article
• Language: English
• Published: Universitas Ahmad Dahlan 2019
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://umpir.ump.edu.my/id/eprint/25657/1/A%20temperature%20characterization.pdf; http://umpir.ump.edu.my/id/eprint/25657/; http://journal.uad.ac.id/index.php/TELKOMNIKA/article/view/11798; http://dx.doi.org/10.12928/telkomnika.v17i5.11798

This paper presents the temperature-gate oxide thickness characteristics of a fin field-effect transistor (FinFET) and discusses the possibility of using such a transistor as a temperature nano-sensor. The investigation of channel oxide thickness–based temperature characteristics is useful to optimi...