Optimal nano dimensional channel of GaAs-FinFET transistor

• Main Authors: Ahmed, Mahmood, Waheb Abdul Jabbar, Shaif Abdullah, Wasan Kadhim, Saad, Hadi, Manap
• Format: Conference or Workshop Item
• Language: English; English
• Published: IEEE 2018
• Subjects: QA75 Electronic computers. Computer science; T Technology (General)
• Online Access: http://umpir.ump.edu.my/id/eprint/25345/1/57.1%20Optimal%20nano%20dimensional%20channel%20of%20GaAs-FinFET%20transistor.pdf; http://umpir.ump.edu.my/id/eprint/25345/2/57.%20Optimal%20nano%20dimensional%20channel%20of%20GaAs-FinFET%20transistor.pdf; http://umpir.ump.edu.my/id/eprint/25345/; https://doi.org/10.1109/SCORED.2018.8710811

This paper investigates the optimal nano-dimensions channel for Gallium Arsenide Fin Field Effect Transistor (GaAs-FinFET) based on I ON /I OFF ratio and subthreshold swing (SS). The impact of reducing channel dimensions (length, width, and oxide thickness) on GaAs-FinFET performance has been evalua...