Characterization of strained silicon MOSFET using semiconductor TCAD tools
The paper is looking into the enhancement of conventional PMOS by incorporating a strained silicon within the channel and bulk of semiconductor. A detailed 2D process simulation of strained silicon PMOS (SSPMos) and its electrical characterization was done using TCAD tool. With the oxide thickness,...
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Main Authors: | Wong, Yah Jin, Saad, Ismail, Ismail, Razali |
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Format: | Conference or Workshop Item |
Language: | English |
Published: |
2006
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Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/7495/1/Razali_Ismail_2006_Characterization_of_Strained_Silicon_MOSFET.pdf http://eprints.utm.my/id/eprint/7495/ http://dx.doi.org/10.1109/SMELEC.2006.380774 |
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