Characterization of strained silicon MOSFET using semiconductor TCAD tools

• Main Authors: Wong, Yah Jin, Saad, Ismail, Ismail, Razali
• Format: Conference or Workshop Item
• Language: English
• Published: 2006
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/7495/1/Razali_Ismail_2006_Characterization_of_Strained_Silicon_MOSFET.pdf; http://eprints.utm.my/id/eprint/7495/; http://dx.doi.org/10.1109/SMELEC.2006.380774

The paper is looking into the enhancement of conventional PMOS by incorporating a strained silicon within the channel and bulk of semiconductor. A detailed 2D process simulation of strained silicon PMOS (SSPMos) and its electrical characterization was done using TCAD tool. With the oxide thickness,...