Fabrication of reduced graphene oxide-gated AlGaAs/GaAs heterojunction transistor
In this report, we discuss possible chemical sensing operation of a graphene-gated AlGaAs/GaAs heterojunction transistor. Band diagram analysis shows the change in transistor conductivity after the graphene work function is altered due to chemical doping by the absorbates. Next, the fabrication proc...
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Main Authors: | Azmi, S. N. C., Rahman, S. F. A., Hashim, A. M. |
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Format: | Conference or Workshop Item |
Published: |
Institute of Electrical and Electronics Engineers Inc.
2016
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Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/73075/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-84991000772&doi=10.1109%2fSMELEC.2016.7573660&partnerID=40&md5=98ad01f4e3c02f04c0cac0b62d836090 |
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