Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection
A Schottky diode was designed and fabricated on an n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for RF power detection. The processing steps used in the fabrication were the conventional steps used in standard GaAs processing. Current–voltage measurements showed that the devices...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Published: |
Elsevier Ltd.
2010
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/22942/ http://dx.doi.org/10.1016/j.spmi.2009.10.011 |
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