Fabrication of reduced graphene oxide-gated AlGaAs/GaAs heterojunction transistor

• Main Authors: Azmi, S. N. C., Rahman, S. F. A., Hashim, A. M.
• Format: Conference or Workshop Item
• Published: Institute of Electrical and Electronics Engineers Inc. 2016
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/73075/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-84991000772&doi=10.1109%2fSMELEC.2016.7573660&partnerID=40&md5=98ad01f4e3c02f04c0cac0b62d836090

In this report, we discuss possible chemical sensing operation of a graphene-gated AlGaAs/GaAs heterojunction transistor. Band diagram analysis shows the change in transistor conductivity after the graphene work function is altered due to chemical doping by the absorbates. Next, the fabrication proc...