An Integrated Linearization Technique for GaAs Bipolar WCDMA Power Amplifier

Here we report a novel linearization and efficiency improvement technique for heterojunction bipolar transistor (HBT)-based Wireless Code Division Multiple Access (WCDMA) power amplifier. A process solution is proposed where a tantalum nitride (TaN) layer is strapped to the HBT base metal layer that...

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Bibliographic Details
Main Authors: Rajendran, Jagadheswaran, Hamid, Sofiyah Sal, Kunhi Mohd, Shukri Korakkottil, Abdullah, Mohd Zaid, Ramiah, Harikrishnan, Kumar, Narendra
Format: Article
Published: Indian Academy of Sciences 2018
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Online Access:http://eprints.um.edu.my/20946/
https://doi.org/10.18520/cs/v114/i02/308-313
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