Fabrication Process of n-AlGaAs/GaAs Schottky Diodes for on-chip Direct Integrated with Dipole Antenna
Schottky diodes are fabricated on n-Aluminium Gallium Arsenide / Gallium Arsenide (n-AlGaAs/GaAs) high-electron-mobility-transistor (HEMT) structure due to availability of high electron mobility and capability of fast switching performance. The processing steps used in the fabrication are the conven...
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| Format: | Article |
| Language: | English English |
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Horizon Research Publishing
2015
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| Online Access: | https://eprints.ums.edu.my/id/eprint/32021/1/Fabrication%20Process%20of%20Schottky%20Diodes%20for%20on-chip%20Direct%20Integrated%20with%20Dipole%20Antenna_ABSTRACT.pdf https://eprints.ums.edu.my/id/eprint/32021/2/Fabrication%20Process%20of%20Schottky%20Diodes%20for%20on-chip%20Direct%20Integrated%20with%20Dipole%20Antenna.pdf https://eprints.ums.edu.my/id/eprint/32021/ https://www.hrpub.org/download/20150620/UJEEE2-14903577.pdf https://doi.org/10.13189/ujeee.2015.030302 |
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https://eprints.ums.edu.my/id/eprint/32021/1/Fabrication%20Process%20of%20Schottky%20Diodes%20for%20on-chip%20Direct%20Integrated%20with%20Dipole%20Antenna_ABSTRACT.pdfhttps://eprints.ums.edu.my/id/eprint/32021/2/Fabrication%20Process%20of%20Schottky%20Diodes%20for%20on-chip%20Direct%20Integrated%20with%20Dipole%20Antenna.pdf
https://eprints.ums.edu.my/id/eprint/32021/
https://www.hrpub.org/download/20150620/UJEEE2-14903577.pdf
https://doi.org/10.13189/ujeee.2015.030302