Distribution of ga vacancies in Zn diffused GaAs
A detailed discussion on the distribution and the characteristics of vacancy profiles in Zn diffused GaAs is presented in this paper. Vacancies are consumed during the diffusion process, creating short-fall in the equilibrium vacancy concentration. The crystal tries to recover this short-fall by...
Saved in:
Main Authors: | , |
---|---|
Format: | Article |
Published: |
1992
|
Online Access: | http://journalarticle.ukm.my/1300/ http://www.ukm.my/jkukm/index.php/jkukm |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|