Characterisation of InP/InGaAs heterojunction bipolar transistor as an optoeletronic mixer
The modeled and characterization of heterojunction bipolar transistor optoelectronic mixer (HBT OEM) has been demonstrated. The model takes into account the doping concentration and dimension of HBT InP/InGaAs. This device shown to have potential in photodetecting and performing frequency up-convers...
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| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2012
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| Online Access: | http://eprints.utm.my/id/eprint/34022/ |
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