Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers
Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I-V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was im...
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| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2007
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/7628/ http://dx.doi.org/10.1063/1.2739849 |
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