Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs

• Main Authors: Bablu K. Ghosh, ToruTanikawa, Akihiro Hashimoto, Akio Yamamoto, Yoshifumi Ito
• Format: Article
• Language: English; English
• Published: ELSEVIER SCIENCE 2003
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: https://eprints.ums.edu.my/id/eprint/20415/1/Reduced%20stress%20GaN%20epitaxial%20layers%20grown%20on%20Si.pdf; https://eprints.ums.edu.my/id/eprint/20415/7/Reduced-stress%20GaN%20epitaxial%20layers%20grown%20on%20Si%281%201%201%29%20by%20using%20a%20porous%20GaN%20interlayer%20converted%20from%20GaAs.pdf; https://eprints.ums.edu.my/id/eprint/20415/; https://doi.org/10.1016/S0022-0248(02)02223-6

This paper reports the reduced-stress GaN epitaxial growth on Si (1 1 1) using a porous GaN interlayer which is formed from GaAs layer by a novel nitridation process. Initially a 2 μm thick GaAs layer is grown on a Si(1 1 1) substrate by MBE. Then, a GaN buffer layer of 20 nm thick is grown on the G...