Fabrication and characterization of n-AlGaAs/GaAs schottky diode for rectenna device application
Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for rectenna device application. Rectenna is one of the most potential devices to form the wireless power supply which is really good at converting microwaves to DC. The processing steps us...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2011
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/29394/2/1757-899X_17_1_012022.pdf http://eprints.utm.my/id/eprint/29394/ http://dx.doi.org/10.1088/1757-899X/17/1/012022 |
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