Two-dimensional (2D) transition metal dichalcogenide semiconductor field-effect transistors: the interface trap density extraction and compact model
A surface potential-based low-field drain current compact model is presented for two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductor field-effect transistors that takes into account the effect of interface trap states on device current-voltage (Ids-Vgs) characteristics and trans...
Saved in:
Main Authors: | Najam, Faraz, Loong, Michael Peng Tan, Ismail, Razali, Yun, Seop Yu |
---|---|
Format: | Article |
Language: | English |
Published: |
IOP Publishing Ltd.
2015
|
Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/55958/1/FarazNajam2015_TwoDimensionalTransitionMetalDichalcogenideSemiconductor.pdf http://eprints.utm.my/id/eprint/55958/ http://dx.doi.org/10.1088/0268-1242/30/7/075010 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Metal oxide-graphene field-effect transistor: interface trap density extraction model
by: Najam, F., et al.
Published: (2016) -
Compact device modelling of interface trap charges with quantum capacitance in mos2-based field-effect transistors
by: Leong, C. H., et al.
Published: (2020) -
Transition metal dichalcogenide for high-performance electrode of supercapacitor
by: Saifful Kamaluddin, Muzakir, et al.
Published: (2018) -
Gfetsim: Graphene field-effect transistor simulator of interface charge density
by: Leong, C. H., et al.
Published: (2017) -
Graphene/transition metal dichalcogenides hybrid supercapacitor electrode: status, challenges, and perspectives
by: Raja Seman, Raja Noor Amalina, et al.
Published: (2018)