Real space multigrid method for ballistic carbon nanotubes field-effect transistor
This paper is focus on the development of a multigrid method, which is applied and its numerical simulation capability in carbon nanotube field-effect transistor (CNTFET). This research applied multigrid method in fixed size nanotube length, ∼45 nm, and the transistor channel (13, 0) intrinsic carbo...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
American Scientific Publishers
2018
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/85467/ http://dx.doi.org/10.1166/jno.2018.2368 |
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