Trench DMOS interface trap characterization by three-terminal charge pumping measurement
The applicability of three-terminal charge pumping (3T-CP) technique to characterize the gate-oxide/Silicon (SiO2/Si) interface in a 45 nm thick SiO2, n-type trench Double-diffused Metal–Oxide–Semiconductor (DMOS) technology transistors is studied. The charge pumping current for process control moni...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2012
|
| Subjects: | |
| Online Access: | http://irep.iium.edu.my/27128/1/S0026271412003150 http://irep.iium.edu.my/27128/ http://www.sciencedirect.com/science/article/pii/S0026271412003150 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|