Enhanced device and circuit-level performance benchmarking of graphene nanoribbon field-effect transistor against a nano-MOSFET with interconnects
Comparative benchmarking of a graphene nanoribbon field-effect transistor (GNRFET) and a nanoscale metal-oxide-semiconductor field-effect transistor (nano-MOSFET) for applications in ultralarge-scale integration (ULSI) is reported. GNRFET is found to be distinctly superior in the circuit-level archi...
Saved in:
Main Authors: | Chin, Huei Chaeng, Lim, Cheng Siong, Wong, Weng Soon, Danapalasingam, Kumeresan A., Arora, Vijay K., Tan, Michael Loong Peng |
---|---|
Format: | Article |
Published: |
Hindawi Publishing Corporation
2014
|
Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/52690/ http://dx.doi.org/10.1155/2014/879813 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Quasi-one-dimensional performance and benchmarking of CMOS-based multichannel carbon nanotube versus nanowire field-effect transistor models
by: Chin, Huei Chaeng, et al.
Published: (2015) -
Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET
by: Tan, Michael Loong Peng, et al.
Published: (2012) -
Mobility diminution in a nano-MOSFET due to carrier injection from the ohmic contacts
by: Riyadi, M. A., et al.
Published: (2011) -
Mobility diminution in a nano-mosfet due to carrier injection from the ohmic contacts
by: Riyadi, Munawar A., et al.
Published: (2011) -
Nano-physics of transient phenomenon in semiconducting devices and circuits
by: Saad, Ismail, et al.
Published: (2005)