Synthesis and characterization of InGaAS nanowires grown by MOCVD

Semiconductor nanowires have been intensively investigated in order to study their unique fundamental and application properties that develop at the nano-scale. One of main problems in the growth of III-V semiconductor nanowire is uniformity both of in dimension and composition of chemical elements....

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Bibliographic Details
Main Authors: Gustiono, D., Wibowo, E., Othaman, Z.
Format: Conference or Workshop Item
Published: 2013
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Online Access:http://eprints.utm.my/id/eprint/51336/
http://iopscience.iop.org/article/10.1088/1742-6596/423/1/012047/pdf
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