Crystal quality enhancement of semi-polar (11 22) InGaN/GaN-based LED grown on M-Plane sapphire substrate via MOCVD / Omar Ayad Fadhil
Gallium nitride (GaN) thin films grown along c-plane (polar) direction are extensively employed for III-nitride based LEDs. However, the wurtzite crystal structure of LEDs grown along c-plane direction suffers from the spontaneous and piezoelectric field, resulting in quantum-confined stark effect (...
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| Format: | Thesis |
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2019
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| Online Access: | http://studentsrepo.um.edu.my/11628/1/Omar.pdf http://studentsrepo.um.edu.my/11628/2/Omar.pdf http://studentsrepo.um.edu.my/11628/ |
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