Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD

The AlInN layers have been grown with different growth parameters on GaN/sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of growth parameters such as pressure and temperature on the Al incorporation during AlInN material growth have been investigated. The results...

Full description

Saved in:
Bibliographic Details
Main Authors: Wei-Ching Huang,, Edward-Yi Chang,, Yuen-Yee Wong,, Kung-Liang Lin,, Yu-Lin Hsiao,, Chang, Fu Dee, Burhanuddin Yeop Majlis,
Format: Article
Language:English
Published: Universiti Kebangsaan Malaysia 2013
Online Access:http://journalarticle.ukm.my/5911/1/19%2520Wei-Ching%2520Huang.pdf
http://journalarticle.ukm.my/5911/
http://www.ukm.my/jsm/
Tags: Add Tag
No Tags, Be the first to tag this record!