Synthesis and characterization of InGaAS nanowires grown by MOCVD
Semiconductor nanowires have been intensively investigated in order to study their unique fundamental and application properties that develop at the nano-scale. One of main problems in the growth of III-V semiconductor nanowire is uniformity both of in dimension and composition of chemical elements....
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Published: |
2013
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/51336/ http://iopscience.iop.org/article/10.1088/1742-6596/423/1/012047/pdf |
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