Growth of binary, ternary and quatenary III-V compounds nanowores by MOCVD

Various III-V compounds semiconductor Nanowires (NWs) have been grown by using vertical camber MOCVD. The morphology of the NWs has been characterized using FESEM and SEM. In addition to binary and ternary NWs such as GaAs, InP, InxGa1- xAs and AlyGa1-yAs NWs, the quaternary compounds InGaAsP NWs ha...

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Bibliographic Details
Main Authors: Othaman, Zulkafli, Sakrani, Samsudi, Wibowo, E.
Format: Article
Published: Persatuan Sains dan Teknologi Keadaan Pepejal Malaysia 2011
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Online Access:http://eprints.utm.my/id/eprint/30502/
https://myjms.mohe.gov.my/index.php/masshp/article/view/4828
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