Growth of semi-polar (11-22) GaN epitaxial layer on M-plane sapphire via MOCVD / Mohd Afiq Anuar
In the past few years, semi-polar (11-22) GaN has attracted much intention in the field of optoelectronics including light-emitting diodes (LEDs), laser diodes (LDs) and photodetectors. Commercially, GaN-based optoelectronic devices are grown along c-plane direction. However, c-oriented GaN-based op...
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| Format: | Thesis |
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2020
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| Online Access: | http://studentsrepo.um.edu.my/12183/2/Mohd_Afiq.pdf http://studentsrepo.um.edu.my/12183/1/Mohd_Afiq.pdf http://studentsrepo.um.edu.my/12183/ |
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