Synthesis and analysis of silicon nanowires grown on Si (111) substrate at different silane gas flow rate

• Main Authors: Wahab, Yussof, Hamidinezhad, Habib, Othaman, Zulkafli, Sumpono, Imam
• Format: Article
• Published: Journal Solid State Science and Technology 2012
• Subjects: TJ Mechanical engineering and machinery
• Online Access: http://eprints.utm.my/id/eprint/33066/; http://journal.masshp.net/wp-content/uploads/Journal/2012/Habib%20Hamidinezhad%2035-40.pdf

Silicon nanowires were grown on Si (111) substrates by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). The nanowires were grouted at 450 °C and 21 watt RF power. Pure silane (99.9995%) and gold colloid were used as precursor and catalyst respectively for growth of wires. T...