High quality single-crystalline aluminum nitride grown using pulsed atomic-layer Epitaxy technique by MOCVD on sapphire substrate / Mohd Nazri Abd Rahman
The unique structural properties and engineering characteristics of nitride-based materials have given them a special position in semiconductor applications. Alloys with a tuned energy bandgap from ultraviolet to infrared wavelengths are possible to be deposited in maintaining the wurtzite crystal s...
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| Format: | Thesis |
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2021
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| Online Access: | http://studentsrepo.um.edu.my/12834/2/Mohd_Nazri.pdf http://studentsrepo.um.edu.my/12834/1/Mohd_Nazri.pdf http://studentsrepo.um.edu.my/12834/ |
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